LTG:GaAs

• LTG:GaAs is GaAs grown by MBE (molecular beam epitaxy) at a low temperature of 250-300 ^oC.
  This material shows many interesting electronic properties which have been attributed to the ~1-2% excess arsenic.
  The excess arsenic results in a high concentration (~1x10²⁰ /cm³) of point defects, primarily as arsenic antisite defects.
  The consequence of the arsenic antisite defects is the introduction of a band of states located within the GaAs band gap.
  These states prevent the GaAs surface from rapidly oxidizing and assist tunneling current.



• A slide about LTG:GaAs
  
  
  
  
• Anneling.
  When LTG:GaAs is annealed at 600-800 ^oC, the excess arsenic forms arsenic precipitates with diameters of 5-15 nm.
  The mechanism of current conduction through the annealed LTG:GaAs is explained by a Schottky-type barrier model of arsenic precipitates.
  Conductivity is determined by the overlap of depletion regions around arsenic precipitates.

---

Back to Nanoscale Physics

People . Images . Papers . Experiments . Information