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Dept. of Physics

The Manfra Group
Quantum Semiconductor Systems

2013

A. T. Hatke, M. A. Zudov, J. D. Watson, M. J. Manfra, L.N. Pfeiffer, and K. W. West. "Evidence for effective mass reduction in GaAs/AlGaAs quantum wells." PHYSICAL REVIEW B 87, 161307(R) (2013).

M. S. Makowski, S. Kim, M. Gaillard, D. Janes, M. J. Manfra, I. Bryan, Z. Sitar, C. Arellano, J. Xie, R. Collazo, and A. Ivanisevic "Physisorption of functionalized gold nanoparticles on AlGaN/GaN highelectron mobility transistors for sensing applications." Appl. Phys. Lett. 102, 074102 (2013)

M. I. Hossain, Z. Ikonic, J. Watson, J. Shao, P. Harrison, M. J. Manfra, and O. Malis. "Strong heavy-to-light hole intersubband absorption in the valence band of carbon-doped GaAs/AlAs superlattices." J. Appl. Phys. 113, 053103 (2013).

Mengwei Si, Jiangjiang J. Gu, Xinwei Wang, Jiayi Shao, Xuefei Li, Michael J. Manfra, Roy G. Gordon, and Peide D. Ye. "Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxidesemiconductorfield-effect transistors." Appl. Phys. Lett. 102, 093505 (2013). 

2012

C. Edmunds, L. Tang, M. Cervantes, G. Gardner, T. Paskova, M. J. Manfra, and O. Malis. "Near-infrared absorption in lattice-matched AlInN/GaN and Strained AlGaN/GaN heterostructures grown by MBE on low-defect GaN substrates." Journal of Electronic Materials 41 5, 881-886 (2012)

J. D. Watson, S. Mondal, G. Gardner, G. Csathy,and  M. J. Manfra. "Exploration of the limits to mobility in two-dimensional hole systems in GaAs/AlGaAs quantum wells."  Physical Review B 85, 165301 (2012)

A. T. Hatke, M. A. Zudov, J. D. Watson, and  M. J. Manfra. "Magnetoplasmon resonance in a two-dimensional electron system driven into a zero-resistance state."  Physical Review B 85, 121306(R) (2012)

N. Deng, A. Kumar, M. J. Manfra, L. N. Pfeiffer, K. W. West, and G. Csathy. "Collective Nature of the Reentrant Integer Quantum Hall States in the Second Landau Level."  Physical Review Letters 108, 086803 (2012)

S. A. Jewett, M. S. Makowski, B. Andrews, M. J. Manfra, and A. Ivanisevic. "Gallium nitride is biocompatible and non-toxic before and after functionalization with peptides." ACTA BIOMATERIALIA 8, 728-733 (2012)

K. Stone, R. R. Du, M. J. Manfra, L. N. Pfeiffer, and K. W. West. "Millimeter wave transmission spectroscopy of gated two-dimensional hole systems." Applied Physics Letters 100, 192104 (2012)

C. Edmunds, L. Tang, J. Shao, D. Li, M. Cervantes. "Improvement of near-infrared absorption linewidth in AlGaN/GaNsuperlattices by optimization of delta-doping location." : Appl. Phys. Lett. 101, 102104 (2012)

N. Deng, J. D. Watson, L. P. Rokhinson, M. J. Manfra, and G. A. Csathy. "Contrasting energy scales of the reentrant integer quantum Hall states." Phys. Rev. B 86, 201301(R) (2012).

D. Li, L. Tang, C. Edmunds, J. Shao, G. Gardner. "Repeatable low-temperature negative-differential resistance fromAl0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beamepitaxy on free-standing GaN substrates." Appl. Phys. Lett. 100, 252105 (2012). 

2011

N. Samkharadze, J. D. Watson, G. Gardner, M. J. Manfra, L. N. Pfeiffer, K. W. West, and G. Csathy. "Quantitative analysis of the disorder broadening and the intrinsic gap for the v = 5/2 fractional quantum Hall state." Physical Review B 84, 121305 (2011)

J. D. Watson, S. Mondal, G. A. Csathy, M. J. Manfra, E. H. Hwang, S. Das Sarma, L. N. Pfeiffer, and K. W. West. "Scattering mechanisms in a high-mobility low-density carbon-doped (100) GaAs two-dimensional hole system." Physical Review B 83, 241305(R) (2011)

A. Kumar, N. Samkharadze, G. A. Csathy, M. J. Manfra, L. N. Pfeiffer, and K. W. West. "Particle-hole asymmetry of fractional quantum Hall states in the second Landau level of a two-dimensional hole system." Physical Review B 83, 201305(R) (2011)

N. Samkharadze, A. Kumar, M. J. Manfra, L. N. Pfeiffer, K. W. West, and G. A. Csathy. "Integrated electronic transport and thermometry at milliKelvin temperatures and in strong magnetic fields." Review of Scientific Instruments 82, 053902 (2011)

S. P. Koduvayur, Y. Lyanda-Geller, S. Khlebnikov, G. Csathy, M. J. Manfra, L. N. Pfeiffer, K. W. West, L. P. Rokhinson. "Effect of Strain on Stripe Phases in the Quantum Hall Regime."  Physical Review Letters 106, 016804 (2011)

2010

A. Kumar, G. A. Csathy, M. J. Manfra, L. N. Pfeiffer, and K. W. West. "Nonconventional odd-denominator fractional quantum Hall states in the second Landau level." Physical Review Letters 105, 246898 (2010)

O. Malis, C. Edmunds, D. H. Li, and M. J. Manfra. "Intersubband transitions in lattice-matched AlInN/GaN heterostructures." 2010 18th Biennial University/Government/Industry Micro-Nano Symposium. (2010)

2009

Y. Dai, Z. Q. Yuan, C. L. Yang, R. R. Du, M. J. Manfra, L. N. Pfeiffer, and K. W. West. "Magnetotransport in Zener tunneling regime in a high-mobility two-dimensional hole gas." Physical Review B 80, 041310(R) (2009)

O. Malis, C. Edmunds, M. J. Manfra, and D. L. Sivco. "Near-infrared intersubband absorption in molecular-beam epitaxy-grown lattice-matched InAlN/GaN superlattices." Applied Physics Letters 94, 161111 (2009)

Z. Q. Yuan, R. R. Du, M. J. Manfra, L. N. Pfeiffer, and K. W. West. "Landau level spectrum in a two-dimensional hole gas in C-doped (100) GaAs/AlGaAs square quantum well." Applied Physics Letters 94, 052103 (2009)

2008

T. M. Lu, Z. F. Li, D. C. Tsui, M. J. Manfra, L. N. Pfeiffer, and K. W. West. "Cyclotron mass of two-dimensional holes in (100) oriented GaAs/AlGaAs heterstructures." Applied Physics Letters 92, 012109 (2008)

2007

M. J. Manfra, E. H. Hwang, S. Das Sarma, L. N. Pfeiffer, K. W. West, and A. M. Sergent. "Transport and percolation in a low-density high-mobility two-dimensional hole system." Physical Review Letters 99, 236402 (2007)

R. L. Willett, M. J. Manfra, L.N. Pfeiffer, and K.W. West. "Confinement of fractional quantum Hall states in narrow conducting channels." Applied Physics Letters 91, 052105 (2007)

R. L. Willett, M. J. Manfra, L. N. Pfeiffer, and K. W. West. "Mesoscopic structures and two-dimensional hole systems in fully field effect controlled heterostructures."  Applied Physics Letters 91, 033510 (2007)

M. J. Manfra, R. de Picciotto, Z. Jiang, S. H. Simon, L. N. Pfeiffer, K. W. West, and A. M. Sergent. "Impact of spin-orbit coupling on quantum Hall nematic phases." Physical Review Letters 98, 206804 (2007)

H. Zhu, K. Lai, D. C. Tsui, S. P. Bayrakci, N. P. Ong, M. Manfra, L. Pfeiffer, and K. West. "Density and well width dependencies of the effective mass of two-dimensional holes in (100) GaAs quantum wells measured using cyclotron resonance at mircowave frequencies." Solid State Communications 141, 510-513 (2007)

S. Schmult, T. Siegrist, A. M. Sergent, M. J. Manfra, and R. J. Molnar. "Optimized growth of lattice-matched InAlN/GaN heterostructures by molecular beam epitaxy."  Applied Physics Letters 90, 021922 (2007)

O. Mitrofanov, S. Schmult, M. J. Manfra, T. Siegrist, N. G. Weimann, A. M. Sergent, and R. J. Molnar. "High quality UV AlGanN/AlGaN distributed Bragg reflectors and microcavities." SPIE Vol. 6473, 64731G (2007)

O. Mitrofanov and M. J. Manfra. "Charge trapping on defects in AlGaN/GaN field effect transistors." SPIE 6473, 64731M (2007)

2006

E. A. Henriksen, S. Syed, Y. J. Wang, M. J. Manfra, L. N. Pfeiffer, K. W. West, and H. L. Stormer. "Splitting of the cyclotron resonance in two-dimensional electron systems." Physica E 34 1-2, 318-320 (2006)

H. T. Chou, D. Goldhaber-Gordon, S. Schmult, M. J. Manfra, A. M. Sergent, R. J. Molnar. "Single-electron transistors in GaN/AlGaN heterostructures." Applied Physics Letters 89, 033104 (2006)

S. Schmult, M. J. Manfra, A. Punnoose, A. M. Sergent, K. W. Baldwin, and R. J. Molnar. "Large Bychkov-Rashba spin-orbit coupling in high-mobility GaN/AlxGa1-xN heterostructures." Physical Review B 74, 033302 (2006)

S. Schmult, M. J. Manfra, A. M. Sergent, A. Punnoose, H. T. Chou, D. Goldhaber-Gordon, and R. J. Molnar. "Quantum transport in high mobility AlGaN/GaN 2DEGs and nanostructures." Physica Status Solidi B 243 7, 1706-1712 (2006)

O. Mitrofanov, S. Schmult, M. J. Manfra, T. Siegrist, N. G. Weimann, A. M. Sergent, and R. J. Molnar. "High-reflectivity ultraviolet AlGaN/AlGaN distributed Bragg reflectors." Applied Physical Letters 88, 171101 (2006)

2005

E. A. Henriksen, S. Syed, Y. Ahmadian, M. J. Manfra, K. W. Baldwin, A. M. Sergent, R. J. Molnar, and H. L. Stormer. "Acoustic phonon scattering in a low density, high mobility AlGaN/GaN field-effect transistor." Applied Physics Letters 86, 252108 (2005)

M. J. Manfra, L. N. Pfeiffer, K. W. West, R. de Picciotto, and K. W. Baldwin. "High mobility two-dimensional hole system in GaAs/AlGaAs quantum wells grown on (100) GaAs substrates." Applied Physics Letters 86, 162106 (2005)

H. T. Chou, S. Luscher, D. Goldhaber-Gordon, M. J. Manfra, A. M. Sergent, K. W. West, and R. J. Molnar. "High-quality quantum point contacts in GaN/AlGaN heterostructures." Applied Physics Letters 86, 073108 (2005)

2004

S. Syed, Y. J. Wang, H. L. Stormer, M. J. Manfra, L. N. Pfeiffer, K. W. West, and R. Molnar. "Large cyclotron-resonance line splitting of two-dimensional electrons in AlGaN/GaN and AlGaAs/GaAs heterostructures." International Journal of Modern Physics B 18 27, 3761-3768 (2004)

M. J. Manfra, K. W. Baldwin, A. M. Sergent, K. W. West, R. J. Molnar, and J. Caissie. "Electron mobility exceeding 160000 cm(2)/V s in AlGaN/GaN heterostructures grown by molecular-beam epitaxy." Applied Physics Letters 85, 22 5394-5396 (2004)

M. J. Manfra, S. H. Simon, K. W. Baldwin, A. M. Sergent, K. W. West, R. J. Molnar, and J. Caissie. "Quantum and transport lifetimes in a tunable low-density AlGaN/GaN two-dimensional electron gas." Applied Physics Letters 85, 22 5278-5280 (2004)

M. J. Manfra, K. W. Baldwin, A. M. Sergent, R. J. Molnar, and J. Caissie. "Electron mobility in very low density GaN/AlGaN/GaN heterostructures." Applied Physics Letters 85, 10 1722-1724 (2004)

O. Mitrofanov and M. J. Manfra. "Poole-Frenkel electron emission from the traps in AlGaN/GaN transistors." Journal of Applied Physics 95, 11 6414-6419 (2004)

S. Syed, M. J. Manfra, Y. J. Wang, R. J. Molnar, and H. L. Stormer. "Electron scattering in AlGaN/GaN structures." Applied Physics Letters 84 9, 1507-1509 (2004)

O. Mitrofanov and M. J. Manfra. "Dynamics of trapped charge in GaN/AlGaN/GaN high electron mobility transistors grown by plasma-assisted molecular beam epitaxy." Applied Physics Letters 84 3, 422-424 (2004)

2003

S. Syed, J. B. Heroux, Y. J. Wang, M. J. Manfra, R. J. Molnar, and H. L. Stormer. "Nonparabolicity of the conduction band of wurtzite GaN." Applied Physics Letters 83 22, 4553-4555 (2003)

J. W. P. Hsu, N. G. Weimann, M. J. Manfra, K. W. West, D. V. Lang, F. F. Schrey, O. Mitrofanov, and R. J. Molnar. "Effect of dislocations on local transconductance in AlGaN/GaN heterostructures as imaged by scanning gate microscopy." Applied Physics Letters 83 22, 4559-4561 (2003)

M. J. Manfra, N. G. Weimann, O. Mitrofanov, T. Waechtler, and D. M. Tennant. "High power GaN/AlGaN/GaN HEMTs operating at 2 to 25 GHz grown by plasma-assisted MBE." Physica Status Solidi A-Applied Research 200 1, 175-178 (2003)

O. Mitrofanov and M. J. Manfra. "Mechanisms of gate lag in GaN/AlGaN/GaN high electron mobility transistors." Superlattices and Microstructures 34 1-2, 33-53 (2003)

S. Syed, M. J. Manfra, Y. J. Wang, H. L. Stormer, and R. J. Molnar. "Large splitting of the cyclotron-resonance line in AlxGa1-xN/GaN heterostructures." Physical Review B 64, 241304 (2003)

O. Mitrofanov, M. J. Manfra, and N. Weimann. "Impact of Si doping on radio frequency dispersion in unpassivated GaN/AlGaN/GaN high-electron-mobility transistors grown by plasma-assisted molecular-beam epitaxy." Applied Physics Letters 82 24, 4361-4363 (2003)

M. J. Manfra, N. Weimann, Y. Baeyens, P. Roux, and D. M. Tennant. "Unpassivated AlGaN/GaN HEMTs with CW power density of 3.2 W/mm at 25 GHz grown by plasma-assisted MBE." Electronic Letters 39 8, 694-695 (2003)

N. G. Weimann, M. J. Manfra, and T. Wachtler. "Unpassivated AlGaN-GaN HEMTs with minimal RF dispersion grown by plasma-assisted MBE on semi-insulating 6H-SiC substrates." IEEE Electron Device Letters 24 2, 57-59 (2003)

2002

N. G. Weimann, M. J. Manfra, J. W. P. Hsu, K. Baldwin, L. N. Pfeiffer, W. West, S. N. G. Chu, D. V. Lang, and R. J. Molnar. "AlGaN/GaN HEMTs grown by molecular beam epitaxy on sapphire, 6H-SiC, and HVPE-GaN templates." Compound Semiconductors 2002 174, 223-226 (2002)

N. G. Weimann, M. J. Manfra, S. Chakraborty, and D. A. Tennant. "Submicron AlGaN/GaN HEMTs with very high drain current density grown by plasma-assisted MBE on 6H-SiC." IEEE Electron Device Letters 23 12, 691-693 (2002)

M. J. Manfra, N. G. Weimann, J. W. P. Hsu, L. N. Pfeiffer, K. W. West, and S. N. G. Chu. "Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures directly on sapphire substrates." Applied Physics Letters 81 8, 1456-1458 (2002)

J. W. P. Hsu, M. J. Manfra, R. J. Molnar, B. Heying, and J. S. Speck. "Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates." Applied Physics Letters 81 1, 79-81 (2002)

M. J. Manfra, N. G. Weimann, J. W. P. Hsu, L. N. Pfeiffer, K. W. West, S. Syed, H. L. Stormer, W. Pan, D. V. Lang, S. N. G. Chu, G. Kowach, A. M. Sergent, J. Caissie, K. M. Molvar, L. J. Mahoney, and R. J. Molnar. "High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy." Journal of Applied Physics 92 1, 338-345 (2002)

N. G. Weimann, J. W. P. Hsu, K. Baldwin, L. N. Pfeiffer, K. W. West, S. N. G. Chu, D. V. Lang, and R. J. Molnar. "AlGaN/GaN HEMTs grown by molecular beam epitaxy on sapphire, SiC, and HVPE GaN templates." IEEE Lester Eastman Conference on High Performance Devices, 126-133 (2002)

2001

J. W. P. Hsu, M. J. Manfra, S. N. G. Chu, C. H. Chen, L. N. Pfeiffer, and R. J. Molnar. "Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy." Applied Physics Letters 78 25, 3980-3982 (2001)

J. W. P. Hsu, M. J. Manfra, D. V. Lang, S. Richter, S. N. G. Chu, A. M. Sergent, R. N. Kleinman, L. N. Pfeiffer, and R. J. Molnar. "Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes." Applied Physics Letters 78 12, 1685-1687 (2001)

J. W. P. Hsu, M. J. Manfra, D. V. Lang, K. W. Baldwin, L. N. Pfeiffer, and R. J. Molnar. "Surface morphology and electronic properties of dislocations in AlGaN/GaN heterostructures." Journal of Electronic Materials 30 3, 110-114 (2001)

2000

M. J. Manfra, L. N. Pfeiffer, K. W. West, H. L. Stormer, K. W. Baldwin, J. W. P. Hsu, D. V. Lang, and R. J. Molnar. "High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy." Applied Physics Letters 77 18, 2888-2890 (2000)

M. J. Manfra, B. B. Goldberg, J. C. Pniower, A. Pinczuk, V Pelligrini, L. N. Pfeiffer, and K. W. West. "Absorption spectroscopy in electron double layers: evidence for broken symmetry states." Physica A 6 1-4, 590-593 (2000)

1998

B. B. Goldberg, M. J. Manfra, L. Pfeiffer, and K. West. "Absorption spectroscopy of charged spin texture excitations at nu=1." Physica B 251, 7-14 (1998)

M. J. Manfra, B. B. Goldberg, L. Pfeiffer, and K. West. "Anderson-Fano resonance and shake-up processes in the magnetophotoluminescence of a two-dimensional electron system." Physical Review B 57 16, R9467-R9470 (1998)

1997

M. J. Manfra, B. B. Goldberg, L. Pfeiffer, and K. West. "Optical determination of the spin polarization of a quantum Hall ferromagnet." Physica E 1 1-4, 28-35 (1997)

M. J. Manfra, B. B. Goldberg, L. Pfeiffer, and K. West. "Skyrmions and the nu=1 quantum Hall ferromagnet." Acta Physica Polonica A 92 4, 621-632 (1997)

1996

M. J. Manfra, E. H. Aifer, B. B. Goldberg, D. A. Broido, L. Pfeiffer, and K. West. "Temperature dependence of the spin polarization of a quantum Hall ferromagnet." Physical Review B 54 24, 17327-17330 (1996)

1994

M. Manfra, S. Berkowitz, R. Molnar, A. Clark, T. D. Moustakas, and W. J. Skocpol. "Reactive ion etching of GaN thin-films." Diagnostic Techniques for Semiconductor Materials Processing 324, 477-480 (1994)