The Manfra Group studies the physics and technology of ultra-high purity III-V semiconductors and is affiliated with the Physics Department, School of Materials Engineering, the School of Electrical and Computer Engineering and Birck Nanotechnology Center at Purdue University. To build the heterostructures and nanostructures needed for our experiments, we employ a high purity growth technique known as molecular beam epitaxy (MBE). MBE allows us to build semiconductor structures one atomic layer at a time and thus engineer the electronic energy levels to suit our needs.
Ongoing projects include fundamental studies of correlated electrons in reduced dimensions in GaAs for future applications in quantum computing and the development of novel light sources in III-Nitride materials. In addition to growth and structural characterization, we utilize low temperature and high magnetic field transport techniques.
Students and Post-Doctoral Researchers in the Manfra Group are exposed to a wide range of problems in modern semiconductor physics and are expected to develop the experimental and critical thinking skills necessary for future careers in industry, academia, and national laboratories.