Fabrication of field effect transistors from antiferromagnetic semiconductors
The aim of the project is to demonstrate key technology toward development of novel multifunctional devices based on antiferromagnetic (AF) semiconductors. The proposed devices are metal-oxide-AF-semiconductor field-effect transistors, where mobile carriers are induced into an AF semiconductor by electrostatic gating. This functionality will enable electrical detection of the magnetization axis in collinear AF materials and, possibly, electrostatic control of magnetization axis.
