Our group's main research area is semiconductor physics with an emphasis on the science and technology of optoelectronic materials. In particular we are exploring the properties of complex semiconductor nano-structures for mid-infrared light emission and detection.
Quantum confinement in low-dimensional semiconductor heterostructures (i.e. quantum wells, wires, and dots) has a strong impact on the optical properties of these materials. In spite of the active research in the field, our knowledge of intersubband transitions in semiconductor nanostructures is still incomplete. Our work involves semiconductor growth, materials characterization, device fabrication, and device testing. In particular, we are studying the physics of quantum cascade lasers (QCLs).
QCLs are semiconductor lasers that utilize optical transitions between quantized levels in the conduction band of semiconductor heterostructures to generate light in the mid– to far-infrared range of the electromagnetic spectrum. We are investigating the fundamental processes involved in charge transport and light emission in QCLs. For more information on QCLs check this presentation.
We also have an active interest in new light emitting mechanisms, such as nonlinear light generation, and novel semiconductor materials (GaN).
A second major area of research in our group involves studies of phase transformations in metallic nanoparticles. Using in-situ time-resolved synchrotron-based x-ray diffraction, we are investigating the structural properties of nanoscale catalysts as they undergo various heat treatments.
Our research has been sponsored by grants from the National Science Foundation and the Research Corporation for Science Advancement. Recent articles and news listed below provide a summary of the grants. (a) BU Inside article (b) EE Times
